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參數資料
| 型號： | JANSF2N7268 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| 中文描述： | 抗輻射功率MOSFET的通孔 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | JANSF2N7268 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
-6.5
-4.1
-26
25
0.2
±20
165
-6.5
2.5
-22
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
PD - 90882F
Pre-Irradiation
International Rectifier’s RAD-Hard HEXFET
TM
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
2/18/03
www.irf.com
1
TO-39
Product Summary
Part Number Radiation Level R
DS(on)
IRHF9130 100K Rads (Si)
IRHF93130 300K Rads (Si)
I
D
QPL Part Number
JANSR2N7389
JANSF2N7389
0.30
0.30
-6.5A
-6.5A
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
For footnotes refer to the last page
IRHF9130
JANSR2N7389
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
HEXFET
T
ECHNOLOGY
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