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參數(shù)資料
| 型號(hào)： | JANSF2N7380 |
| 英文描述： | 100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | 100V的300kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 257AA封裝 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 107K |
| 代理商： | JANSF2N7380 |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
14.4
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
9.1
IDM
Pulsed Drain Current
58
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
150
mJ
IAR
Avalanche Current
—
A
EAR
Repetitive Avalanche Energy
—
mJ
dv/dt
Peak Diode Recovery dv/dt
6.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
7.0 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
12/17/01
www.irf.com
1
Product Summary
Part Number
Radiation Level
RDS(on)
ID
QPL Part Number
IRHY7130CM
100K Rads (Si)
0.18
14.4A JANSR2N7380
IRHY3130CM
300K Rads (Si)
0.18
14.4A JANSF2N7380
IRHY4130CM
600K Rads (Si)
0.18
14.4A JANSG2N7380
IRHY8130CM 1000K Rads (Si)
0.18
14.4A JANSH2N7380
For footnotes refer to the last page
IRHY7130CM
JANSR2N7380
100V, N-CHANNEL
REF: MIL-PRF-19500/614
RAD-Hard
HEXFET
TECHNOLOGY
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
PD - 91274D
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| JANSF2N7382 | -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package |
| JANSG2N7380 | 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| JANSG2N7431 | 60V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| JANSG2N7432 | 100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| JANSG2N7432U | 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSF2N7380U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7381 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk 制造商:Microsemi Corporation 功能描述:RADIATION HARDENED N-CHANNEL MOSFET - Waffle Pack |
| JANSF2N7382 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk 制造商:Microsemi Corporation 功能描述:RADIATION HARDENED N-CHANNEL MOSFET - Waffle Pack |
| JANSF2N7382U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7383 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
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