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參數資料
| 型號： | JANSF2N7423U |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | - 200伏300kRad高可靠性單P溝道工貿硬化的貼片MOSFET的- 1封裝 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 126K |
| 代理商： | JANSF2N7423U |
www.irf.com
5
Pre-Irradiation
IRHN9250, JANSR2N7423U
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
50
100
150
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-14 A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
1
10
100
1000
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
1
10
100
0
2000
4000
6000
8000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.0
0.5
-V ,Source-to-Drain Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
-
S
V = 0 V
T = 150 C
°
T = 25 C
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| JANSR2N7423U | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| IRHNA4064 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
| IRHNA4160 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 51A I(D) | SMT |
| IRHNA4260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
| IRHNA53Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
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| JANSF2N7425 | 制造商:International Rectifier 功能描述:RAD- HARDENED 100V, P CHANNEL POWER MOSFET - Rail/Tube |
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