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參數資料
| 型號： | JANSF2N7426U |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統（SMD - 2） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 118K |
| 代理商： | JANSF2N7426U |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
-29
-18
-116
300
2.4
±20
500
-29
30
-20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA9260 100K Rads (Si) 0.154
IRHNA93260 300K Rads (Si) 0.154
11/21/00
www.irf.com
1
For footnotes refer to the last page
I
D
QPL Part Number
JANSR2N7426U
JANSF2N7426U
-29A
-29A
SMD-2
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
IRHNA9260
JANSR2N7426U
200V, P-CHANNEL
REF: MIL-PRF-19500/655
RAD-Hard
HEXFET
TECHNOLOGY
PD - 93969
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|---|---|
| JANSR2N7440 | Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| JANSR2N7403 | 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET |
| JANSR2N7404 | 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET |
| JANSR2N7405 | Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 |
| JANSR2N7406 | 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JANSF2N7428 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7431 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7431U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7432 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7432U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
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