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參數(shù)資料
| 型號(hào)： | JANSF2N7494U5 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝（持有LCC - 18） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 143K |
| 代理商： | JANSF2N7494U5 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
12*
8.0
48
25
0.2
±20
156
12
2.5
2.3
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
0.42 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
o
C
A
www.irf.com
1
LCC-18
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
RADIATION HARDENED JANSR2N7494U5
POWER MOSFET 30V, N-CHANNEL
SURFACE MOUNT (LCC-18)
REF: MIL-PRF-19500/700
TECHNOLOGY
IRHE57Z30
Product Summary
Part Number Radiation Level R
DS(on)
IRHE57Z30 100K Rads (Si) 0.07
12A* JANSR2N7494U5
IRHE53Z30 300K Rads (Si) 0.07
IRHE54Z30 500K Rads (Si) 0.07
IRHE58Z30 1000K Rads (Si) 0.07
I
D
QPL Part Number
12A*
12A*
12A*
JANSF2N7494U5
JANSG2N7494U5
JANSH2N7494U5
* Current is limited by package
PD - 93863E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSG2N7494U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| JANSH2N7494U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| JANSR2N7494U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| JANSF2N7495U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| JANSG2N7495U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
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