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參數(shù)資料
| 型號(hào)： | JANSG2N7261 |
| 英文描述： | 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
| 中文描述： | 100V的600kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 205AF包 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 440K |
| 代理商： | JANSG2N7261 |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
8.0
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
5.0
IDM
Pulsed Drain Current
32
PD @ TC = 25°C
Max. Power Dissipation
25
W
Linear Derating Factor
0.20
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
130
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
0.98 (Typical )
g
Pre-Irradiation
International Rectifiers RADHard HEXFET technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
8/10/01
www.irf.com
1
Product Summary
Part Number Radiation Level
Part Number Radiation Level R
R
RDS(on)
DS(on)
IIIIIDDDDD
QPL Part Number
IRHF7130
100K Rads (Si)
0.18
8.0A JANSR2N7261
IRHF3130
300K Rads (Si)
0.18
8.0A JANSF2N7261
IRHF4130
600K Rads (Si)
0.18
8.0A JANSG2N7261
IRHF8130
1000K Rads (Si) 0.18
8.0A JANSH2N7261
For footnotes refer to the last page
IRHF7130
JANSR2N7261
100V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD Hard
HEXFET
HEXFET
TECHNOLOGY
TECHNOLOGY
TO-39
Features:
!
Single Event Effect (SEE) Hardened
!
Low RDS(on)
!
Low Total Gate Charge
!
Proton Tolerant
!
Simple Drive Requirements
!
Ease of Paralleling
!
Hermetically Sealed
!
Ceramic Package
!
Light Weight
PD - 90653D
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