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參數資料
| 型號： | JANSR2N7395 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET |
| 中文描述： | 8 A, 100 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數： | 1/8頁 |
| 文件大小： | 71K |
| 代理商： | JANSR2N7395 |
1
JANSR2N7440
Formerly Available as FSS913A0R4,
Radiation Hardened, SEGR Resistant,
P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional
information.
Die Family TA17796.
MIL-PRF-19500/659.
Features
10A, -100V, r
DS(ON)
= 0.280
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 1.5nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
Packaging
TO-257AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
JANSR2N7440
TO-257AA
JANSR2N7440
G
D
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
G
SD
Data Sheet
November 1999
File Number
4803
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 1999
相關PDF資料 |
PDF描述 |
|---|---|
| JANSR2N7396 | 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET |
| JANSR2N7397 | 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET |
| JANSR2N7398 | 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET |
| JANSR2N7399 | 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET |
| JANSR2N7400 | 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JANSR2N7396 | 制造商:Microwave Semiconductor 功能描述: |
| JANSR2N7399 | 制造商:Harris Corporation 功能描述: |
| JANSR2N7422 | 制造商:International Rectifier 功能描述: |
| JANSR2N7422U | 制造商:International Rectifier 功能描述:TRAN 100V 100K RAD - Rail/Tube |
| JANSR2N7423 | 制造商:International Rectifier 功能描述:200V 15.000A HEXFET RADHARD - Rail/Tube |
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