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參數資料
| 型號： | JANSR2N7422U |
| 英文描述： | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | - 100V的100kRad高可靠性單P溝道工貿硬化的貼片MOSFET的- 1封裝 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 269K |
| 代理商： | JANSR2N7422U |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
5.5
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
3.5
IDM
Pulsed Drain Current
22
PD @ TC = 25°C
Max. Power Dissipation
25
W
Linear Derating Factor
0.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
240
mJ
IAR
Avalanche Current
—A
EAR
Repetitive Avalanche Energy
—mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 ( for 5s)
Weight
0.42 (Typical)
g
PD - 90713E
Pre-Irradiation
International Rectifier’s RADHard HEXFET technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
02/01/01
www.irf.com
1
Product Summary
Part Number Radiation Level
RDS(on)
ID
QPL Part Number
IRHE7230
100K Rads (Si)
0.35
5.5A
JANSR2N7262U
IRHE3230
300K Rads (Si)
0.35
5.5A
JANSF2N7262U
IRHE4230
600K Rads (Si)
0.35
5.5A
JANSG2N7262U
IRHE8230
1000K Rads (Si)
0.35
5.5A
JANSH2N7262U
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
For footnotes refer to the last page
IRHE7230
JANSR2N7262U
200V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD-Hard
HEXFET
MOSFET
TECHNOLOGY
LCC - 18
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| JANSR2N7424 | -60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package |
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| JANSR2N7425 | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package |
| JANSR2N7425U | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
| JANSR2N7431 | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
相關代理商/技術參數 |
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|---|---|
| JANSR2N7423 | 制造商:International Rectifier 功能描述:200V 15.000A HEXFET RADHARD - Rail/Tube |
| JANSR2N7423U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7424 | 制造商:International Rectifier 功能描述:TRAMSISTOR - Rail/Tube |
| JANSR2N7424U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7425 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
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