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參數資料
型號: JANSR2N7473U2
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)
中文描述: 抗輻射功率MOSFET的通孔系統(SMD - 2)
文件頁數: 1/8頁
文件大小: 188K
代理商: JANSR2N7473U2
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
53.5
34
214
250
2.0
±20
380
53.5
25
9.2
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
www.irf.com
1
SMD-2
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
For footnotes refer to the last page
RADIATION HARDENED JANSR2N7473U2
POWER MOSFET 200V, N CHANNEL
THRU-HOLE (SMD-2) REF:MIL-PRF-19500/684
TECHNOLOGY
IRHNA57260SE
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHNA57260SE 100K Rads (Si) 0.038
53.5A JANSR2N7473U2
PD-91839J
相關PDF資料
PDF描述
JANSR2N7474U2 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
JANSR2N7475T1 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSR2N7480U3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSF2N7480U3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSG2N7480U3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
相關代理商/技術參數
參數描述
JANSR2N7474U2 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk
JANSR2N7475T1 制造商:International Rectifier 功能描述:45A 130V NCHANNEL RAD HARD POWER MOSFEDCT MIL FPR 19500/685 - Rail/Tube
JANSR2N7475T1/DATAPACK 制造商:International Rectifier 功能描述:SPACE PART DATA - Virtual or Non-Physical Inventory (Software & Literature)
JANSR2N7475T1/SLDC 制造商:International Rectifier 功能描述:SPACE PART SINGLE LOT DATECODE CHARGE - Virtual or Non-Physical Inventory (Software & Literature)
JANSR2N7476T1 制造商:International Rectifier 功能描述:JANSR2N7476T1 - Rail/Tube
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