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參數資料
型號: JANSR2N7495U5
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
中文描述: 抗輻射功率MOSFET表面貼裝(持有LCC - 18)
文件頁數: 1/8頁
文件大小: 135K
代理商: JANSR2N7495U5
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
11.7
7.4
46.8
25
0.2
±20
87
11.7
2.5
3.4
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
0.42 (Typical)
g
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHE57034 100K Rads (Si) 0.08
11.7A
IRHE53034 300K Rads (Si) 0.08
11.7A
IRHE54034 500K Rads (Si) 0.08
11.7A
IRHE58034 1000K Rads (Si) 0.1
11.7A
QPL Part Number
JANSR2N7495U5
JANSF2N7495U5
JANSG2N7495U5
JANSH2N7495U5
For footnotes refer to the last page
Pre-Irradiation
LCC-18
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
RADIATION HARDENED JANSR2N7495U5
POWER MOSFET 60V, N-CHANNEL
SURFACE MOUNT (LCC-18)
REF: MIL-PRF-19500/700
IRHE57034
TECHNOLOGY
PD - 94239E
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