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參數資料
| 型號： | JANSR2N7500U5 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統（SMD - 2） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 186K |
| 代理商： | JANSR2N7500U5 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
9.0
6.0
36
25
0.2
±20
56
9.0
2.5
6.6
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
0.42 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
LCC-18
RADIATION HARDENED JANSR2N7500U5
POWER MOSFET 130V, N-CHANNEL
SURFACE MOUNT(SMD-2)
REF: MIL-PRF-19500/707
IRHE57133SE
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHE57133SE 100K Rads (Si) 0.13
9.0A JANSR2N7500U5
TECHNOLOGY
PD - 94325A
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