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參數資料
| 型號： | JANTX1N5314UR-1 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CURRENT REGULATOR DIODES |
| 中文描述： | 4.7 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 38K |
| 代理商： | JANTX1N5314UR-1 |
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (978) 689-0803
141
1N5283UR-1 THRU 1N5314UR-1 AVAILABLE IN
JAN
,
JANTX, JANTXV AND
JANS
PER MIL-PRF-19500/463
CURRENT REGULATOR DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
METALLURGICALLY BONDED
FIGURE 1
DESIGN DATA
CASE:
DO-213AB
,
Hermetically sealed
glass case. (MELF, LL41)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
50 °C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (
ZOJX): 25
°C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end negative.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MILLIMETERS INCHES
MIN
MAX
2.39
2.66
0.41
0.55
4.80
5.20
4.11 REF.
0.03 MIN.
DIM
D
F
G
G1
S
MIN
.094
.016
.189
.159 REF.
.001 MIN.
MAX
.105
.022
.205
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
MINIMUM
DYNAMIC
IMPEDANCE
@VS= 25V
ZS(M)
(Note 1)
25.0
19.0
14.0
9.0
6.6
4.10
3.30
2.70
1.90
1.55
1.35
1.15
1.00
0.880
0.800
0.700
0.640
0.580
0.540
0.510
0.475
0.420
0.395
0.370
0.345
0.320
0.300
0.280
0.265
0.255
0.245
0.235
MINIMUM
KNEE
IMPEDANCE
@VK= 6.0 V
ZK(M)
(Note 2)
2.75
2.35
1.95
1.60
1.35
1.00
0.870
0.750
0.560
0.470
0.400
0.335
0.290
0.240
0.205
0.180
0.155
0.135
0.115
0.105
0.092
0.074
0.061
0.052
0.044
0.035
0.029
0.024
0.020
0.017
0.014
0.012
MAXIMUM
LIMITING
VOLTAGE
@ lL= 0.8 lp (min)
VL(VOLTS)
1.00
1.00
1.00
1.00
1.00
1.05
1.05
1.05
1.10
1.13
1.15
1.20
1.25
1.29
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.75
1.85
1.95
2.00
2.15
2.25
2.35
2.50
2.60
2.75
2.90
CDI
TYPE
NUMBER
REGULATOR CURRENT
l p (mA) @ VS= 25V
NOM
0.22
0.24
0.27
0.30
0.33
0.39
0.43
0.47
0.56
0.62
0.68
0.75
0.82
0.91
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.80
2.00
2.20
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
MIN
0.198
0.216
0.243
0.270
0.297
0.351
0.387
0.423
0.504
0.558
0.612
0.675
0.738
0.819
0.900
0.990
1.08
1.17
1.26
1.35
1.44
1.62
1.80
1.98
2.16
2.43
2.70
2.97
3.24
3.51
3.87
4.23
MAX
0.242
0.264
0.297
0.330
0.363
0.429
0.473
0.517
0.616
0.682
0.748
0.825
0.902
1.001
1.100
1.210
1.32
1.43
1.54
1.65
1.76
1.98
2.20
2.42
2.64
2.97
3.30
3.63
3.96
4.29
4.73
5.17
CDLL5283
CDLL5284
CDLL5285
CDLL5286
CDLL5287
CDLL5288
CDLL5289
CDLL5290
CDLL5291
CDLL5292
CDLL5293
CDLL5294
CDLL5295
CDLL5296
CDLL5297
CDLL5298
CDLL5299
CDLL5300
CDLL5301
CDLL5302
CDLL5303
CDLL5304
CDLL5305
CDLL5306
CDLL5307
CDLL5308
CDLL5309
CDLL5310
CDLL5311
CDLL5312
CDLL5313
CDLL5314
NOTE 1
ZS is derived by superimposing A 90Hz RMS signal equal to 10% of VSon VS
NOTE 2
ZKis derived by superimposing A 90Hz RMS signal equal to 10% of VKon VK
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +75°C @ TEC= +125°C
Power Derating: 10 mW / °C above TEC= +125°C
Peak Operating Voltage: 100 Volts
1N5283UR-1 thru 1N5314UR-1
and
CDLL5283 thru CDLL5314
相關PDF資料 |
PDF描述 |
|---|---|
| JANS1N5314UR-1 | CURRENT REGULATOR DIODES |
| JAN1N5291UR-1 | IGBT Module; Continuous Collector Current, Ic:200A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:1500W; Collector Current:200A; Collector Emitter Voltage, Vceo:1.4kV; Leaded Process Compatible:No RoHS Compliant: No |
| JANTX1N5291UR-1 | IGBT Module; Continuous Collector Current, Ic:200A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:1500W; Collector Current:200A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No |
| JANTXV1N5291UR-1 | IGBT Module; Power Dissipation, Pd:600W; Current Rating:200A; Voltage Rating:600V RoHS Compliant: Yes |
| JANS1N5291UR-1 | IGBT Module; Continuous Collector Current, Ic:300A; Collector Emitter Saturation Voltage, Vce(sat):3V; Collector Emitter Voltage, Vceo:1200V; Transistor Polarity:Dual NPN |
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