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參數(shù)資料
型號: JANTX1N6102AUS
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝: HERMETIC SEALED, GLASS, D-5B, E-MELF-2
文件頁數(shù): 1/5頁
文件大小: 123K
代理商: JANTX1N6102AUS
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2007
4-27-2007 REV C
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6102US thru 1N6137AUS
and 1N6138US thru 1N6173AUS
1N6
102
US
1N6
137
AUS
1N6
138
US
1N6
173
AUS
DESCRIPTION
APPEARANCE
This surface mount series of industry recognized voidless-hermetically-
sealed Bidirectional Transient Voltage Suppressor (TVS) designs is
military qualified to MIL-PRF-19500/516 and are ideal for high-reliability
applications where a failure cannot be tolerated. They provide a Working
Peak “Standoff” Voltage selection from 5.2 to 152 Volts with two package
sizes for 500 W and 1500 W ratings. They are very robust in hard-glass
construction and also use an internal metallurgical bond identified as
Category I for high-reliability applications. Both of these are also military
qualified to MIL-PRF-19500/516 and are available as both a non suffix part
and an “A” suffix part involving different voltage tolerances as further
described in note 4 on page 2. These devices are also available in axial-
leaded packages for thru-hole mounting by deleting the “US” suffix (see
separate data sheet for 1N6102 thru 1N6173A).
Microsemi also offers
numerous other TVS products to meet higher and lower peak pulse power
and voltage ratings in both through-hole and surface-mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category I” metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-PRF-
19500/516 by adding JAN, JANTX, or JANTXV prefix
(consult factory for 1N6102US and 1N6138US)
JANS available for 1N6103AUS thru 1N6118AUS per
MIL-PRF-19500/516 as well as further options for
screening in accordance with MIL-PRF-19500 for JANS
on all others in this series by using a “MSP” prefix, e.g.
MSP6119AUS, MSP6143AUS, etc.
Axial-leaded equivalents also available (see separate
data sheet for 1N6102 thru 1N6173)
Military and other high reliability transient protection
Extremely robust construction
Extensive range in Working Peak “Standoff”
Voltage (VWM) from 5.2 to 152 V
Available as either 500 W or 1500 W Peak Pulse
Power (PPP) using two different size packages
ESD and EFT protection per IEC6100-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Square-end-cap terminals for easy placement
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating (T
J) & Storage Temperature: -55
oC to +175oC
Peak Pulse Power (P
PP) at 25
oC: 500 W for 1N6102US to
1N6137AUS and 1500 W for 1N6138US to 1N6173AUS @
10/1000 s (also see Figures 1,2 and 3)
Impulse repetition rate (duty factor): 0.01%
Steady-State Power: 3.0 W for 1N6102US to 1N6137AUS
and 5.0 W for 1N6138US to 1N6173AUS up to TEC = 150
oC.
Linearly derate above TEC =150
oC to zero at T
EC =175
oC.
Steady-State Power: 2.0 W for 1N6102US to 1N6137AUS
and 3.0 W for 1N6138US to 1N6173AUS @ TA = 25
oC (see
note and Figure 4 for linear derating at higher temperatures)
Thermal Resistance (junction to endcap): 8.3 oC/W for
1N6102US to 1N6137AUS and 5.0
oC/W for 1N6138US to
1N6173AUS
Solder Temperatures: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note Previous inventory
had solid Silver (Ag) with Tin/Lead (Sn/Pb) finish.
MARKING: None
POLARITY: No polarity marking for these
bidirectional TVSs
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg for 500 Watt (E Package)
1100 mg for 1500 Watt (G Package)
See package dimensions and recommended pad
layouts on last page for both the “E” (D-5B) and “G”
(D-5C) size packages
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where TOP or TJ(MAX) is not exceeded
Package “E”
(or “D-5B”)
Package “G”
(or “D-5C”)
相關(guān)PDF資料
PDF描述
JANMLL4107-1 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
JANMLL4619C-1 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
JANTXMLL4107C-1 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
JANTXMLL4127D-1 56 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
JANTXMLL4618D-1 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTX1N6102US 制造商:Semtech Corporation 功能描述:
JANTX1N6103 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 5.7V 500W 2-Pin Case E 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 5.7V 500W 2PIN E - Bulk
JANTX1N6103A 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 5.7V 500W 2-Pin Case E 制造商:Semtech Corporation 功能描述:Diode TVS Single Bi-Dir 5.7V 500W 2-Pin 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 5.7V 500W 2PIN E - Bulk 制造商:Microsemi 功能描述:Diode TVS Single Bi-Dir 5.7V 500W 2-Pin Case E
JANTX1N6103AUS 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 5.7V 500W 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 5.7V 500W 2PIN E - Trays 制造商:Microsemi 功能描述:Diode TVS Single Bi-Dir 5.7V 500W 2-Pin E-MELF
JANTX1N6103US 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Trays
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