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參數資料
| 型號： | JANTX2N2946A |
| 英文描述： | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-46 |
| 中文描述： | 晶體管|晶體管|進步黨| 35V的五（巴西）總裁| 100mA的一（c）|的TO - 46 |
| 文件頁數： | 1/21頁 |
| 文件大小： | 137K |
| 代理商： | JANTX2N2946A |
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
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| JANTX2N3418 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N3418S | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| JANTX2N3019 | 功能描述:兩極晶體管 - BJT JANTX2N3019 RoHS:否 制造商:ON Semiconductor 配置:Single 晶體管極性:NPN 集電極—基極電壓 VCBO:140 VDC 集電極—發射極最大電壓 VCEO:80 VDC 發射極 - 基極電壓 VEBO:7 VDC 集電極—射極飽和電壓:0.2 V 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:15 mA 最大工作溫度:+ 200 C 安裝風格:Through Hole 封裝 / 箱體:TO-5 |
| JANTX2N3019S | 功能描述:兩極晶體管 - BJT JANTX2N3019S RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| JANTX2N3027 | 制造商:Microsemi Corporation 功能描述:Thyristor SCR 30V 8A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:THYRISTOR SCR 30V 8A 3PIN TO-18 - Bulk |
| JANTX2N3028 | 制造商:Microsemi Corporation 功能描述:Thyristor SCR 60V 8A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:THYRISTOR SCR 60V 8A 3PIN TO-18 - Bulk 制造商:Microsemi 功能描述:Thyristor SCR 60V 8A 3-Pin TO-18 |
| JANTX2N3029 | 制造商:Microsemi Corporation 功能描述:THYRISTOR SCR 100V 8A 3PIN TO-18 - Bulk |
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