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參數(shù)資料
| 型號： | JANTX2N5416 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP LOW POWER SILICON TRANSISTOR |
| 中文描述： | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | SIMILAR TO TO-5, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 71K |
| 代理商： | JANTX2N5416 |
TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 391
Devices
2N3019
2N3019S
Qualified Level
JAN
JANTX
JANTXV
JANS
2N3057A
2N3700
2N3700S
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Value
80
140
7.0
1.0
0.8
0.4
0.5
0.4
5.0
1.8
1.8
1.16
-55 to +175
Units
Vdc
Vdc
Vdc
Adc
W
W
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Jct Temp Range
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
T
J
,
T
stg
0
C
1) Derate linearly 4.6 mW/
0
C for type 2N3019 and 2N3019S; 2.3 mW/
0
C for type 2N3057A;
2.85 mW/
0
C for type 2N3700; 6.6 mW/
0
C for type 2N3700UB for T
A
≥
+25
0
C.
2)
Derate linearly 28.6 mW/
0
C for type 2N3019 and 2N3019S;
10.3 mW/
0
C for types 2N3057A, 2N3700, & 2N3700UB for T
C
≥
+25
0
C.
TO-39* (TO-205AD)
2N3019, 2N3019S
TO- 18* (TO-206AA)
2N3700
TO-46* (TO-206AB)
2N3057A
3 PIN
SURFACE MOUNT
*
2N3700UB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100
μ
Adc
Emitter-Base Breakdown Voltage
I
E
= 100
μ
Adc
Collector-Emitter Breakdown Current
I
C
= 30 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
(BR)
CBO
140
Vdc
V
(BR)
EBO
7.0
Vdc
V
(BR)
CEO
80
Vdc
120101
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| JANTX2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
| JANTX2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/485 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:2V @ 5mA，50mA 電流 - 集電極截止（最大值）:1mA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:U4 標(biāo)準(zhǔn)包裝:1 |
| JANTX2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANTX2N5581 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-46 - Bulk |
| JANTX2N5582 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
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