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參數資料
| 型號： | JANTX2N6766 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 129K |
| 代理商： | JANTX2N6766 |
Product Summary
Part Number
JANTX2N6766
JANTXV2N6766
BV
DSS
R
DS(on)
I
D
Features:
I
Avalanche Energy Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
N-CHANNEL
200 Volt, 0.085
HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
JANTX2N6766
JANTXV2N6766
[REF:MIL-PRF-19500/543]
[GENERIC:IRF250]
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
JANTX2N6766, JANTXV2N6766
Units
30
19
120
150
1.2
±20
500
30
15
5.0
-55 to 150
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
Weight
g
o
C
A
30A
0.085
200V
Provisional Data Sheet No. PD-9.338D
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| JANTXV2N6782U | HEXFET Transistor(HEXFET 晶體管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| JANTX2N6766T1 | 制造商:Microsemi Corporation 功能描述:2N6766T1JANTX - Bulk |
| JANTX2N6768 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET, TO-204AA, LAW - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 400 V 150 W 110 nC Hexfet Transistor Through Hole - TO-3 |
| JANTX2N6768T1 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(3+Tab) TO-254 T/R 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JANTX2N6770 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET (NFET) - Bulk |
| JANTX2N6770T1 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-254 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
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