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參數資料
型號: JANTX2N6902
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-204AA
中文描述: 晶體管| MOSFET的| N溝道| 100V的五(巴西)直| 12A條(丁)|對204AA
文件頁數: 1/23頁
文件大小: 135K
代理商: JANTX2N6902
MIL-PRF-19500/545D
27 July 2001
SUPERSEDING
MIL-PRF-19500/545C
21 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER
TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated
device type.
1.2 Physical dimensions. See figure 1 (similar to T0-205), figures 2, 3, and 4 (JANHC and JANKC), and
figure 5 (U3).
1.3 Maximum ratings.
Types
PT
TA = +25°C
PT
TC = +25°C
VCBO
VCEO
VEBO
IC
(1)
Reverse
pulse (2)
energy
Safe
operating
area
Tstg
and TJ
W
V dc
A dc
mj
°C
2N5151, L
2N5153, L
1 (3)
11.8 (4)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
2N5151U3
2N5153U3
1.16 (5)
100 (6)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
(1) This value applies for Pw
≤ 8.3 ms, duty cycle ≤ 1 percent.
(2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy
test circuit of figure 7.
(3) Derate linearly 5.7 mW/
°C for TA > +25°C.
(4) Derate linearly 66.7 mW/
°C for TC > +25°C.
(5) Derate linearly 6.67 mW/
°C for T
A > +25°C.
(6) Derate linearly 571 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-
VAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料
PDF描述
JANTX2N6904 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA
JANTX2N6987 TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | TO-116
JANTX2N6987U TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | LLCC
JANTX2N6988 TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | FP
JANTX2N6989 TRANSISTOR | BJT | ARRAY | INDEPENDENT | 50V V(BR)CEO | 800MA I(C) | TO-116
相關代理商/技術參數
參數描述
JANTX2N6903 制造商:International Rectifier 功能描述:MOSFET, Hi-Rel, Logic Level, QPL
JANTX2N6904 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 2PIN TO-204AA - Bulk
JANTX2N691 制造商:Microsemi Corporation 功能描述:SILICON POWER THYRISTOR - Bulk
JANTX2N692 制造商:Microsemi Corporation 功能描述:Thyristor SCR 800V 150A 制造商:Microsemi Corporation 功能描述:SILICON POWER THYRISTOR TO-208 AA LAW - Bulk
JANTX2N6966 制造商:HARRIS 功能描述:5961013846933
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