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參數資料
型號: JANTX2N7227
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-254AA
中文描述: 晶體管| MOSFET的| N溝道| 400V五(巴西)直|第14A條(丁)|對254AA
文件頁數: 1/23頁
文件大小: 135K
代理商: JANTX2N7227
MIL-PRF-19500/545D
27 July 2001
SUPERSEDING
MIL-PRF-19500/545C
21 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER
TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated
device type.
1.2 Physical dimensions. See figure 1 (similar to T0-205), figures 2, 3, and 4 (JANHC and JANKC), and
figure 5 (U3).
1.3 Maximum ratings.
Types
PT
TA = +25°C
PT
TC = +25°C
VCBO
VCEO
VEBO
IC
(1)
Reverse
pulse (2)
energy
Safe
operating
area
Tstg
and TJ
W
V dc
A dc
mj
°C
2N5151, L
2N5153, L
1 (3)
11.8 (4)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
2N5151U3
2N5153U3
1.16 (5)
100 (6)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
(1) This value applies for Pw
≤ 8.3 ms, duty cycle ≤ 1 percent.
(2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy
test circuit of figure 7.
(3) Derate linearly 5.7 mW/
°C for TA > +25°C.
(4) Derate linearly 66.7 mW/
°C for TC > +25°C.
(5) Derate linearly 6.67 mW/
°C for T
A > +25°C.
(6) Derate linearly 571 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-
VAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料
PDF描述
JANTX2N7227U 400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
JANTX2N7228 30V N-Channel PowerTrench MOSFET
JANTXV2N1893 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-39
JANTXV2N1893S TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
JANTXV2N2221A TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-18
相關代理商/技術參數
參數描述
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JANTX2N7228U 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 12A 3PIN TO-254AA - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk
JANTX2N7236 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 18A 3PIN TO-254AA - Bulk 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET (PFET) - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET P-CH
JANTX2N7236U 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 18A 3SMD-1 - Bulk 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET (PFET) - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET P-CH 制造商:International Rectifier 功能描述:Single P-Channel 100 V 125 W 60 nC Hexfet Power Mosfet Surface Mount - SMD-1
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