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參數資料
| 型號： | JANTX2N930 |
| 英文描述： | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 30MA I(C) | TO-18 |
| 中文描述： | 晶體管|晶體管|叩| 45V的五（巴西）總裁| 30mA的一（c）|到18 |
| 文件頁數： | 1/21頁 |
| 文件大小： | 137K |
| 代理商： | JANTX2N930 |
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料 |
PDF描述 |
|---|---|
| JANTX2N930UB | BJT |
| JANTXV2N3739 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 250MA I(C) | TO-66 |
| JANTXV2N3743 | TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 50MA I(C) | TO-39 |
| JANTXV2N3766 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-66 |
| JANTXV2N3767 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-66 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JANTX2N930UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANTX3251A | 制造商:Motorola Inc 功能描述: |
| JANTX4625-1 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JANTX4N22 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JANTX4N22A | 功能描述:Optoisolator Transistor with Base Output 1000VDC 1 Channel TO-78-6 制造商:tt electronics/optek technology 系列:- 包裝:散裝 零件狀態:有效 通道數:1 電壓 - 隔離:1000VDC 電流傳輸比（最小值）:25% @ 10mA 電流傳輸比（最大值）:- 打開 / 關閉時間（典型值）:- 上升/下降時間（典型值）:20μs，20μs（最大） 輸入類型:DC 輸出類型:有基極的晶體管 電壓 - 輸出（最大值）:40V 電流 - 輸出/通道:50mA 電壓 - 正向（Vf）（典型值）:1.5V（最大） 電流 - DC 正向（If）:40mA Vce 飽和值（最大值）:300mV 工作溫度:-55°C ~ 125°C 安裝類型:通孔 封裝/外殼:TO-78-6 金屬罐 供應商器件封裝:TO-78-6 標準包裝:1 |
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