
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E. Walnut St., Garland, TX 75040
(972) 272-3571
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
3 - 7
4N22
4N23
JAN, JANTX, JANTXV,
SINGLE CHANNEL OPTOCOUPLERS
4N24
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Overall current gain...1.5 typical (4N24)
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
+1kV electrical isolation
Applications:
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed metal case. The
4N22
,
4N23
and
4N24
’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,
JANS, JANTX and JANTXV quality levels.
*
ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage........................................................................................................................................................
±
1kV
Emitter-Collector Voltage..........................................................................................................................................................4V
Collector-Emitter Voltage (
V
CEO
,
I
F
= 0
)....................................................................................................................................35V
Collector-Base Voltage (
V
CEO
,
I
F
= 0
).......................................................................................................................................35V
Reverse Input Voltage .............................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)....................................40mA
Peak Forward Input Current (Value applies for tw
<
1
μ
s PRR
<
300 pps) ..............................................................................1A
Continuous Collector Current..............................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW
Storage Temperature..........................................................................................................................................-65°C to +125°C
Operating Free-Air Temperature Range............................................................................................................-55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds)..............................................................................240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C above 65°C.
* JEDEC registered data
Package Dimensions Schematic Diagram
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
6 LEADS
0.016 [0.41]
0.019 [0.48]
0.500 [12.70]
1
2
3
5
6
7
0.335 [8.51]
0.305 [7.75]
MIN.
0.040 [1.02]
MAX.
0.155 [3.94]
0.185 [4.70]
0.045 [1.14]
0.029 [0.73]
0.034 [0.864]
0.028 [0.711]
45°
TO5
0.022 [5.08]
7
K
A
5
2
B
E
1
3
C