欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): JANTXV2N2221AUA
英文描述: TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
中文描述: 晶體管|晶體管|叩| 40V的五(巴西)總裁| 800mA的一(c)|貼片
文件頁(yè)數(shù): 1/23頁(yè)
文件大小: 135K
代理商: JANTXV2N2221AUA
MIL-PRF-19500/545D
27 July 2001
SUPERSEDING
MIL-PRF-19500/545C
21 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER
TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated
device type.
1.2 Physical dimensions. See figure 1 (similar to T0-205), figures 2, 3, and 4 (JANHC and JANKC), and
figure 5 (U3).
1.3 Maximum ratings.
Types
PT
TA = +25°C
PT
TC = +25°C
VCBO
VCEO
VEBO
IC
(1)
Reverse
pulse (2)
energy
Safe
operating
area
Tstg
and TJ
W
V dc
A dc
mj
°C
2N5151, L
2N5153, L
1 (3)
11.8 (4)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
2N5151U3
2N5153U3
1.16 (5)
100 (6)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
(1) This value applies for Pw
≤ 8.3 ms, duty cycle ≤ 1 percent.
(2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy
test circuit of figure 7.
(3) Derate linearly 5.7 mW/
°C for TA > +25°C.
(4) Derate linearly 66.7 mW/
°C for TC > +25°C.
(5) Derate linearly 6.67 mW/
°C for T
A > +25°C.
(6) Derate linearly 571 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-
VAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關(guān)PDF資料
PDF描述
JANTXV2N2221AUB TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | CHIP
JANTXV2N2222AUA TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
JANTXV2N2222AUB TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
JANTXV2N2369A TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-18
JANTXV2N2369AU TRANSISTOR | BJT | NPN | 15V V(BR)CEO | LLCC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N2221AUB 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin UB 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN UB - Waffle Pack
JANTXV2N2222A 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
JANTXV2N2222AL 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-18 - Bulk
JANTXV2N2222AUA 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 4-Pin UA 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack 制造商:Microsemi 功能描述:Trans GP BJT NPN 50V 0.8A 4-Pin UA
JANTXV2N2222AUB 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin UB 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack
主站蜘蛛池模板: 肇东市| 布尔津县| 黔江区| 琼中| 洛川县| 伊吾县| 紫阳县| 青冈县| 南城县| 饶阳县| 阳原县| 丘北县| 吉木乃县| 湘潭市| 凉城县| 黑水县| 绥滨县| 阿合奇县| 五台县| 龙陵县| 定州市| 乳山市| 玛多县| 大安市| 中江县| 泽普县| 江源县| 保德县| 屏东市| 灯塔市| 海门市| 治县。| 舟曲县| 左贡县| 黄大仙区| 同仁县| 桂东县| 临朐县| 汤原县| 抚远县| 海南省|