欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: JANTXV2N2919
英文描述: TRANSISTOR | BJT | PAIR | NPN | 60V V(BR)CEO | 30MA I(C) | TO-77
中文描述: 晶體管|晶體管|一對|叩| 60V的五(巴西)總裁| 30mA的一(c)|至77
文件頁數: 1/21頁
文件大小: 137K
代理商: JANTXV2N2919
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料
PDF描述
JANTXV2N2919L TRANSISTOR | BJT | PAIR | NPN | 60V V(BR)CEO | 30MA I(C) | TO-99
JANTXV2N2919U BJT
JANTXV2N2920L TRANSISTOR | BJT | PAIR | NPN | 60V V(BR)CEO | 30MA I(C) | TO-99
JANTXV2N2920U BJT
JANTXV2N2944A TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 100MA I(C) | TO-46
相關代理商/技術參數
參數描述
JANTXV2N2919L 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 0.03A 6PIN TO-78 - Bulk
JANTXV2N2919U 制造商:Microsemi Corporation 功能描述:NPN DUAL TRANSISTORS U LAW - Bulk
JANTXV2N2920 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 0.03A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 6PIN TO-78 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT NPN 60V 0.03A 6-Pin TO-78
JANTXV2N2920L 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 6PIN TO-78 - Bulk
JANTXV2N2920U 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 0.03A 6-Pin Case U 制造商:Microsemi Corporation 功能描述:NPN DUAL TRANSISTORS U LAW - Bulk
主站蜘蛛池模板: 锡林郭勒盟| 伊川县| 蒙城县| 长春市| 澄江县| 江北区| 金昌市| 石柱| 邵武市| 和政县| 宁阳县| 芜湖县| 多伦县| 威远县| 朔州市| 拉孜县| 辉南县| 新源县| 丽水市| 神农架林区| 全椒县| 永川市| 阜平县| 泰安市| 泗水县| 衡南县| 仙桃市| 大英县| 确山县| 岑溪市| 广宁县| 孟津县| 嘉兴市| 庆云县| 溧阳市| 武邑县| 南木林县| 宜昌市| 抚松县| 襄樊市| 湾仔区|