欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: JANTXV2N4261
英文描述: TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 30MA I(C) | TO-72
中文描述: 晶體管|晶體管|進步黨| 15V的五(巴西)總裁| 30mA的一(c)|至72
文件頁數: 1/21頁
文件大小: 137K
代理商: JANTXV2N4261
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料
PDF描述
JANTXV2N4261UB BJT
JANTXV2N4854 TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600MA I(C) | TO-226(6)
JANTXV2N5251 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 90A I(C) | STR-1/2
JANTXV2N5581 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-46
JANTXV2N5582 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-46
相關代理商/技術參數
參數描述
JANTXV2N4261UB 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack
JANTXV2N4399 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 30A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 30A 3PIN TO-3 - Bulk
JANTXV2N4449 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 15V 3PIN TO-46 - Bulk
JANTXV2N4449U 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 15V 6PIN U - Bulk
JANTXV2N4449UA 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 15V 4PIN UA - Bulk
主站蜘蛛池模板: 台中市| 越西县| 宜良县| 明溪县| 资阳市| 江西省| 道孚县| 汶川县| 将乐县| 华池县| 宜州市| 平果县| 卓资县| 望谟县| 苏尼特左旗| 璧山县| 泊头市| 建阳市| 资兴市| 淳化县| 望奎县| 集安市| 安阳县| 云梦县| 福贡县| 合江县| 确山县| 扶绥县| 四会市| 南召县| 万荣县| 肃宁县| 江油市| 休宁县| 广平县| 武定县| 临颍县| 麻江县| 阳西县| 新民市| 商城县|