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參數(shù)資料
型號: JANTXV2N6790
廠商: International Rectifier
英文描述: HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管)
中文描述: HEXFET功率MOSFET(馬鞍山的HEXFET功率場效應(yīng)管)
文件頁數(shù): 1/6頁
文件大小: 126K
代理商: JANTXV2N6790
Product Summary
Part Number
JANTX2N6790
JANTXV2N6790
BV
DSS
R
DS(on)
I
D
Features:
I
Avalanche Energy Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
N-CHANNEL
Provisional Data Sheet No. PD-9.427B
200 Volt, 0.80
HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
JANTX2N6790
JANTXV2N6790
[REF:MIL-PRF-19500/555]
[GENERIC:IRFF220]
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
JANTX2N6790, JANTXV2N6790
Units
3.5
2.25
14
20
0.16
±20
5.0
-55 to 150
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
V/ns
VGS
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
0.98 (typical)
Weight
g
o
C
A
3.5A
0.80
200V
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