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參數資料
型號: JANTXV2N7225U
廠商: International Rectifier
英文描述: HEXFET Power MOSFET(HEXFET 功率MOS場效應管)
中文描述: HEXFET功率MOSFET(馬鞍山的HEXFET功率場效應管)
文件頁數: 1/7頁
文件大小: 158K
代理商: JANTXV2N7225U
12/20/99
www.irf.com
1
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
27.4
17
110
150
1.2
±20
500
27.4
15.0
5.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
o
C
300 (for 5 seconds)
2.6 (typical)
g
N - CHANNEL
A
IRFN250
JANTX2N7225U
JANTXV2N7225U
[REF:MIL-PRF-19500/592]
HEXFET
POWER MOSFET
Product Summary
Part Number
IRFN250
BV
DSS
200V
R
DS(on)
0.100
I
D
27.4A
Features:
n
Avalanche Energy Ratings
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Light Weight
HEXFET
power MOSFET technology is the key to
InternationalRectifier’s advanced line of power
MOSFET transistors. The efficient geometry
achieves very low on-state resistance combined
with high transconductance.
HEXFET
power MOSFET transistors also feature
all of the well-established advantages of MOSFETs,
such as voltage control, very fast switching, ease of
paralleling and electrical parameter temperature
stability. They are well-suited for applications such
as switching power supplies, motor controls, in-
verters, choppers, audio amplifiers and high-en-
ergy pulse circuits.
The Surface Mount Device (SMD-1) package rep-
resents another step in the continual evolution of
surface mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1package to meet the specific
needs of the power market by increasing the size
of the bottom source pads, thereby enhancing the
thermal and electrical performance.
200 Volt, 0.100
MOSFET
PD-91549B
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