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參數資料
| 型號： | JANTXV2N7237U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET(HEXFET 功率MOS場效應管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管） |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 176K |
| 代理商： | JANTXV2N7237U |
12/20/99
www.irf.com
1
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
-18
-11
-72
125
1.0
±20
500
-18
12.5
-5.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
o
C
300 (for 5 seconds)
2.6 (typical)
g
P - CHANNEL
A
IRFN9140
JANTX2N7236U
JANTXV2N7236U
[REF:MIL-PRF-19500/595]
HEXFET
POWER MOSFET
Product Summary
Part Number
IRFN9140
BV
DSS
-100V
R
DS(on)
0.20
I
D
-18A
Features:
n
Avalanche Energy Ratings
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Light Weight
HEXFET
power MOSFET technology is the key to
International Rectifier’s advanced line of power
MOSFET transistors. The efficient geometry
achieves very low on-state resistance combined
with high transconductance.
HEXFET
power MOSFET transistors also feature
all of the well-established advantages of MOSFETs,
such as voltage control, very fast switching, ease of
paralleling and electrical parameter temperature
stability. They are well-suited for applications such
as switching power supplies, motor controls, in-
verters, choppers, audio amplifiers and high-en-
ergy pulse circuits.
The Surface Mount Device (SMD-1) package rep-
resents another step in the continual evolution of
surface mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1package to meet the specific
needs of the power market by increasing the size
of the bottom source pads, thereby enhancing the
thermal and electrical performance.
-100 Volt, 0.20
MOSFET
PD-91553C
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