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參數(shù)資料
| 型號(hào)： | JANTXV2N7371 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP DARLINGTON HIGH POWER SILICON TRANSISTOR |
| 中文描述： | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-254AA |
| 封裝： | TO-254, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 71K |
| 代理商： | JANTXV2N7371 |
TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 391
Devices
2N3019
2N3019S
Qualified Level
JAN
JANTX
JANTXV
JANS
2N3057A
2N3700
2N3700S
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Value
80
140
7.0
1.0
0.8
0.4
0.5
0.4
5.0
1.8
1.8
1.16
-55 to +175
Units
Vdc
Vdc
Vdc
Adc
W
W
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Jct Temp Range
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
T
J
,
T
stg
0
C
1) Derate linearly 4.6 mW/
0
C for type 2N3019 and 2N3019S; 2.3 mW/
0
C for type 2N3057A;
2.85 mW/
0
C for type 2N3700; 6.6 mW/
0
C for type 2N3700UB for T
A
≥
+25
0
C.
2)
Derate linearly 28.6 mW/
0
C for type 2N3019 and 2N3019S;
10.3 mW/
0
C for types 2N3057A, 2N3700, & 2N3700UB for T
C
≥
+25
0
C.
TO-39* (TO-205AD)
2N3019, 2N3019S
TO- 18* (TO-206AA)
2N3700
TO-46* (TO-206AB)
2N3057A
3 PIN
SURFACE MOUNT
*
2N3700UB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100
μ
Adc
Emitter-Base Breakdown Voltage
I
E
= 100
μ
Adc
Collector-Emitter Breakdown Current
I
C
= 30 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
(BR)
CBO
140
Vdc
V
(BR)
EBO
7.0
Vdc
V
(BR)
CEO
80
Vdc
120101
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