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參數資料
| 型號： | JANTXVH2N7261 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 8A條（丁）|至205AF |
| 文件頁數： | 1/21頁 |
| 文件大小： | 307K |
| 代理商： | JANTXVH2N7261 |
MIL-PRF-19500/350G
2 April 2002
SUPERSEDING
MIL-PRF-19500/350F
18 August 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER
TYPES: 2N3867, 2N3867S, 2N3868, AND 2N3868S
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistor.
Four levels of product assurance are provided for each encapsulated device type and two levels of product
assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO- 5, TO-39) for encapsulated devices, figures 2 and 3 for
unencapsulated devices.
*
1.3 Maximum ratings. Unless otherwise specified, TA = +25
°C.
Types
PT 1/
TA =
+25
°C
PT 2/
TC =
+25
°C
VCBO
VCEO
VEBO
IC
TSTG and
TOP
RθJC
2N3867, S
2N3868, S
W
1.0
W
10
V dc
min
40
60
V dc
min
40
60
V dc
4.0
A dc
3.0
°C
-65 to +200
°C/W
17.5
1/ Derate linearly 5.71 mW/
°C for TA > +25°C.
2/ Derate linearly 5.71 mW/
°C for TC > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box
3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)
appearing at the end of this document or by letter.
The documentation and process conversion measures necessary to
comply with this document shall be completed by 2 July, 2002.
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