
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
BV
R
≥
-30V
C
rss
≤
2.0pF
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +150 °C
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (PAD)
Continuous Power Dissipation (J/SSTPAD)
300mW
350mW
Maximum Currents
Forward Current (PAD)
Forward Current (J/SSTPAD)
50mA
10mA
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
-45
-30
-35
TYP MAX
0.8
0.5
1.5
UNITS
CONDITIONS
ALL PAD
ALL SSTPAD
ALL JPAD
BV
R
Reverse Breakdown
Voltage
I
R
= -1μA
V
F
Forward Voltage
1.5
0.8
2
V
I
F
= 5mA
PAD1,5
All Others
C
rss
Total Reverse Capacitance
pF
V
R
= -5V,
f
= 1MHz
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
PAD
2
-1
-2
-5
-10
-20
-50
-100
JPAD
2
-5
-10
-20
-50
-100
-200
-500
SSTPAD
2
-5
-10
-20
-50
UNITS
CONDITIONS
(SST/J)PAD1
(SST/J)PAD2
(SST/J)PAD5
(SST/J)PAD10
(SST/J)PAD20
(SST/J)PAD50
(SST/J)PAD100
(SST/J)PAD200
(SST/J)PAD500
I
R
Maximum Reverse
Leakage Current
pA
V
R
= -20V
* Cathode tied to Case
PAD*
TO-72
A
K*
1
2
BOTTOM VIEW
SSTPAD
SOT-23
TOP VIEW
1
2
3
K
A
K
JPAD
TO-92
BOTTOM VIEW
1
2
K
A
PAD1,2,5
TO-72
A
K
C
1
3
2
BOTTOM VIEW
Linear Integrated Systems
PAD SERIES
PICO AMPERE DIODES
Linear Integrated Systems
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