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參數(shù)資料
| 型號： | JTDA150A |
| 英文描述： | TRANSISTOR | BJT | NPN | 15A I(C) | FO-91VAR |
| 中文描述： | 晶體管|晶體管|叩| 15A條一（c）|佛91VAR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 264K |
| 代理商： | JTDA150A |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
JTDA 150A
145 Watts, 36 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The JTDA-150A is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces
junction temperature, extends life.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 350 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 15 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 36 Volts
PW = Note 1
DF = Note 1
F = 1215 MHz
145
8
45
24
3:1
Watts
Watts
dB
%
BVebo
BVces
h
FE
θ
jc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 20 mA
Ic = 60 mA
Ic = 5.0A, Vce = 5 V
3.5
55
20
0.5
Volts
Volts
C/W
o
Note 1: JTIDS Pulse = 7 Micorseconds On / Off for 3.3 Millisec, 22 % Long term duty
2: At rated pulse conditions
Issue June 1996
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