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參數資料
| 型號： | K1B6416B6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位同步突發統一晶體管隨機存取存儲器 |
| 文件頁數： | 1/46頁 |
| 文件大小： | 768K |
| 代理商： | K1B6416B6C |
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Revision 1.0
January 2005
K1B6416B6C
- 1 -
U
t
RAM
Document Title
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision History
Revision No.
0.0
0.1
0.2
0.3
0.4
1.0
Remark
Advance
Advance
Advance
Preliminary
Preliminary
Final
History
Initial Draft
- Design target
Revised
- Deleted Deep Power Down Mode support
Revised
- Changed product code from K1B6416B7C into K1B6416B6C
Revised
- Filled out Package type(54ball FBGA 6.0mm x 8.0mm)
- Changed Hi-Z parameters(tCHZ, tOHZ, tBHZ, tWZ) from Max.7ns
into Max.12ns and changed tHZ from Max.10ns into Max.12ns
- Updated "Fig.17 TIMING WAVEFORM OF WRITE CYCLE(1)" in
page 23
- Added comment on standby current(I
SB1
) measure condition as
"Standby mode is supposed to be set up after at least one active
operation after power up. I
SB1
is measured after 60ms from the time
when standby mode is set up."
- Added comment on restriction of the transition between Asynchro-
nous Write operation and Fully Synchronous bus operation(Page
10,11)
- Filled out I
SB1
value, I
SBP
value and I
CC2
value in Table 17(DC AND
OPERATING CHARACTERISTICS)
- Added Synchronous Operating Current(I
CC3
, Max.40mA)
- Added tCSHP(A)(CS high pulse width) parameter as Min.10ns in the
ASYNCHRONOUS AC CHARACTERISTICS
Revised
- Changed I
SB1
(< 40
°
C) and I
SBP
(3/4 block, < 40
°
C) from 100
μ
A into
120
μ
A
- Changed I
SBP
(1/2 block and 1/4 block, < 40
°
C) from 95
μ
A into 115
μ
A
Finalized
Draft Date
March 11, 2004
April 19, 2004
May 10, 2004
September 1, 2004
October 12, 2004
January 20, 2005
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