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參數資料
| 型號： | K4D263238A-GC36 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 500mW 3Vz 0.05mA-Izt 0.05 0.8uA-Ir 1 SOD-123 3K/REEL |
| 中文描述： | 100萬x 32Bit的× 4銀行雙數據速率同步DRAM的雙向數據選通和DLL |
| 文件頁數： | 1/17頁 |
| 文件大小： | 298K |
| 代理商： | K4D263238A-GC36 |
128M DDR SDRAM
K4D263238A-GC
- 1 -
Rev. 2.0 (Jan. 2003)
128Mbit DDR SDRAM
Revision 2.0
January 2003
1M x 32Bit x 4 Banks
Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
(144-Ball FBGA)
Samsung Electronics reserves the right to change products or specification without notice.
相關PDF資料 |
PDF描述 |
|---|---|
| K4D263238A-GC40 | DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL |
| K4D263238A-GC45 | DIODE ZENER SINGLE 500mW 3.6Vz 0.05mA-Izt 0.05 7.5uA-Ir 2 SOD-123 3K/REEL |
| K4D263238A-GC50 | DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL |
| K4D263238D | Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 16x31.5 mm; Packaging: Bulk |
| K4D263238D-QC40 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4D263238A-GC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238A-GC45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238A-GC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
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