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參數資料
| 型號： | K4E160411D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk |
| 中文描述： | 4米× 4位的CMOS動態隨機存儲器的擴展數據輸出 |
| 文件頁數： | 1/21頁 |
| 文件大小： | 256K |
| 代理商： | K4E160411D |
K4E170411D, K4E160411D
K4E170412D, K4E160412D
CMOS DRAM
This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K
Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of
this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh
operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high
band-width, low power consumption and high reliability. It may be used as main memory unit for high level computer, microcomputer and
personal computer.
Part Identification
- K4E170411D-B(F) (5V, 4K Ref.)
- K4E160411D-B(F) (5V, 2K Ref.)
- K4E170412D-B(F) (3.3V, 4K Ref.)
- K4E160412D-B(F) (3.3V, 2K Ref.)
Extended Data Out Mode operation
(Fast Page Mode with Extended Data Out)
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
Fast parallel test mode capability
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
Single +5V
±
10% power supply (5V product)
Single +3.3V
±
0.3V power supply (3.3V product)
Control
Clocks
RAS
CAS
W
Vcc
Vss
DQ0
to
DQ3
A0-A11
(A0 - A10)
*1
A0 - A9
(A0 - A10)
*1
Memory Array
4,194,304 x4
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
L-ver
K4E170411D
K4E170412D
K4E160411D
K4E160412D
5V
3.3V
5V
3.3V
4K
64ms
128ms
2K
32ms
Performance Range
t
RAC
-50
50ns
-60
60ns
Speed
t
CAC
15ns
17ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
Remark
5V/3.3V
5V/3.3V
Active Power Dissipation
Speed
3.3V
5V
4K
324
288
2K
396
360
4K
495
440
2K
605
550
-50
-60
Unit : mW
S
Data out
Buffer
Data in
Buffer
OE
Note)
*1
: 2K Refresh
Col. Address Buffer
Row Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
Column Decoder
Row Decoder
VBB Generator
相關PDF資料 |
PDF描述 |
|---|---|
| K4E160412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160812D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x20 mm; Packaging: Bulk |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4E160412D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160811D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170411D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170412C-FC60 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 16M-Bit 4Mx4 3.3V 24-Pin TSOP-II |
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