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參數資料
| 型號： | K4E661612C-TC60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 4米× 16位的CMOS動態隨機存儲器的擴展數據輸出 |
| 文件頁數： | 1/36頁 |
| 文件大小： | 884K |
| 代理商： | K4E661612C-TC60 |
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CMOS DRAM
K4E661612C,K4E641612C
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor-
mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated
using Samsung
′
s advanced CMOS process to realize high band-width, low power consumption and high reliability.
Extended Data Out Mode operation
2 CAS Byte/Word Read/Write operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Fast parallel test mode capability
Self-refresh capability (L-ver only)
LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic TSOP(II) packages
+3.3V
±
0.3V power supply
Control
Clocks
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Memory Array
4,194,304 x 16
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
S
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ
8
to
DQ15
OE
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Part Identification
- K4E661612C-TC/L(3.3V, 8K Ref.)
- K4E641612C-TC/L(3.3V, 4K Ref.)
FEATURES
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
L-ver
K4E661612C*
K4E641612C
8K
4K
64ms
128ms
Unit :
mW
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Active Power Dissipation
Speed
-45
-50
-60
8K
324
288
252
4K
468
432
396
Performance Range
Speed
-45
-50
-60
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
74ns
84ns
104ns
t
HPC
17ns
20ns
25ns
相關PDF資料 |
PDF描述 |
|---|---|
| K4E661612C-TL45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-TL50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-TL60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4E661612C-TL45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-TL50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-TL60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS DRAM |
| K4E661612E-TC50 | 制造商:Samsung Electro-Mechanics 功能描述:4M X 16 EDO DRAM, 50 ns, PDSO50 |
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