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參數(shù)資料
| 型號： | K4S51153PF-YF1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| 中文描述： | 8米× 16 × 4銀行在54FBGA移動SDRAM |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 108K |
| 代理商： | K4S51153PF-YF1L |
K4S51153PF - Y(P)F
September 2004
1
Mobile SDRAM
VDD/VDDQ =1.8V/1.8V.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation.
Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
DQM for masking.
Auto refresh.
64ms refresh period (8K cycle).
Commercial Temperature Operation (-25
°
C ~ 70
°
C).
2 /CS Support.
54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).
FEATURES
The K4S51153PF is 536,870,912 bits synchronous high data
rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
GENERAL DESCRIPTION
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
ORDERING INFORMATION
- F : Low Power, Commercial Temperature(-25
°
C ~ 70
°
C)
Notes :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific
purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Part No.
Max Freq.
Interface
Package
K4S51153PF-Y(P)F75
133MHz(CL=3),83MHz(CL=2)
LVCMOS
54 FBGA Pb
(Pb Free)
K4S51153PF-Y(P)F90
111MHz(CL=3),83MHz(CL=2)
K4S51153PF-Y(P)F1L
111MHz(CL=3)
*1
,66MHz(CL=2)
Address configuration
Organization
Bank
Row
Column Address
32M x16
BA0,BA1
A0 - A12
A0 - A8
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| K4S51153PF-YPF | 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S51153PF-YPF1L | 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4S51153PF-YF75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S51153PF-YF90 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S51153PF-YPF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S51153PF-YPF1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S511632B-CL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
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