型號: | K4S643232C |
廠商: | SAMSUNG SEMICONDUCTOR CO. LTD. |
英文描述: | Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP 0 to 70 |
中文描述: | 200萬× 32內存為512k × 32 × 4銀行同步DRAM LVTTL |
文件頁數(shù): | 1/43頁 |
文件大小: | 1155K |
代理商: | K4S643232C |
相關PDF資料 |
PDF描述 |
---|---|
K4S643232C-TC10 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 |
K4S643232C-TC55 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 |
K4S643232C-TC60 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 |
K4S643232C-TC70 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 |
K4S643232E | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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K4S643232C-TC/L10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
K4S643232C-TC/L55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
K4S643232C-TC/L60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
K4S643232C-TC/L70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
K4S643232C-TC/L80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |