型號: | K6F3216T6M |
廠商: | SAMSUNG SEMICONDUCTOR CO. LTD. |
英文描述: | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
中文描述: | 200萬x16位超低功耗和低電壓的CMOS靜態RAM全 |
文件頁數: | 1/9頁 |
文件大小: | 167K |
代理商: | K6F3216T6M |
相關PDF資料 |
PDF描述 |
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K6F3216T6M-F | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F3216U6M | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F3216U6M-F | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F4008U2E | 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F4008U2E-EF55 | 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
相關代理商/技術參數 |
參數描述 |
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K6F3216T6M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F3216U6M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F3216U6M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F4008U2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F4008U2E-EF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |