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參數資料
| 型號： | K6F4016R4E-EF85 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 256K x16位超低功耗和低電壓的CMOS靜態RAM全 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 119K |
| 代理商： | K6F4016R4E-EF85 |
Revision 1.0
March 2001
CMOS SRAM
K6F4016R4E Family
- 1 -
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Document Title
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
1.0
Remark
Preliminary
Final
History
Initial draft
Finalize
Draft Date
November 10, 2000
March 12, 2001
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| K6F4016R4E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| K6F4016U6G | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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