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參數資料
型號: K6L0908C2A-TB70
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Kx8 bit Low Power CMOS Static RAM
中文描述: 64Kx8位低功耗CMOS靜態RAM
文件頁數: 1/9頁
文件大小: 143K
代理商: K6L0908C2A-TB70
K6L0908C2A Family
CMOS SRAM
Revision 4.0
January 1997
1
Document Title
64Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
2.0
3.0
4.0
Remark
Design target
Preliminary
Final
Final
Final
Final
History
Initial draft
Revision
Finalize
Revision
- Add 45ns part with 30pf test load.
Revision
- Change Data Sheet format :
One data sheets for industrial and commercial product
Revision
- Change Data Sheet format
- Remove 45ns part from commercial product and 100ns part
from industrial product
- Remove low power part form TSOP package
Draft Data
Novemer 28, 1993
May 13, 1994
December 1, 1994
August 12, 1995
April 15, 1996
January 9, 1998
The attached data, sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
相關PDF資料
PDF描述
K6L0908C2A-B 64Kx8 bit Low Power CMOS Static RAM
K6L0908C2A-F 64Kx8 bit Low Power CMOS Static RAM
K6L0908C2A 64Kx8 bit Low Power CMOS Static RAM
K6L0908C2A-L 64Kx8 bit Low Power CMOS Static RAM
K6L0908C2A-P 64Kx8 bit Low Power CMOS Static RAM
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