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參數(shù)資料
| 型號： | K6R1004V1C-C20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| 中文描述： | 256Kx4位（與OE）的高速CMOS靜態(tài)RAM（3.3V的）。 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 137K |
| 代理商： | K6R1004V1C-C20 |
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 1 -
CCPCCCRPreliminary
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
Document Title
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Remark
Preliminary
Final
Final
History
Initial release with Preliminary.
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Relax DC characteristics.
Item
I
CC
Add 10ns & Low Power Ver.
Previous
65mA
63mA
60mA
Changed
70mA
68mA
65mA
12ns
15ns
20ns
Draft Data
Aug. 5th. 1998
Sep. 7th. 1998
Apr. 24. 2000
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1004V1C-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
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