- 您現在的位置：買賣IC網 > PDF目錄374287 > K6R1016V1D-EC08 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). PDF資料下載
參數資料
| 型號： | K6R1016V1D-EC08 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（與OE）的高速CMOS靜態RAM（5.0V操作）。 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 307K |
| 代理商： | K6R1016V1D-EC08 |
K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
CMOS SRAM
Revision 3.3
October 2000
- 1 -
for AT&T
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 2.1
Rev. 2.2
Rev. 3.0
Rev. 3.1
Rev. 3.2
Rev. 3.3
Remark
Preliminary
Final
Final
Final
Final
Final
Final
Final
Final
History
Initial release with Preliminary.
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Changed DC characteristics.
Item
I
CC
Added 48-fine pitch BGA.
Changed device part name for FP-BGA.
Item
Symbol
ex) K6R1016V1C-Z -> K6R1016V1C-F
Changed device ball name for FP-BGA.
Previous
I/O1 ~ I/O8
I/O9 ~ I/O16
1. Added 10ns speed for FP-BGA only.
2. Changed Standby Current.
Item
Standby Current(Isb1)
3. Added Data Retention Characteristics.
Added 10ns speed for all packages(44SOJ / 44TSOP2 / 48FPBGA)
Supply Voltage Change
1. Only 10ns Bin : 3.15V ~ 3.6V
2. T he Rest Bin : 3.0V ~ 3.6V
V
IH
/V
IL
Change
Previous
85mA
83mA
80mA
Changed
95mA
93mA
90mA
12ns
15ns
20ns
Previous
Z
Changed
F
Changed
I/O9 ~ I/O16
I/O1 ~ I/O8
Previous
0.3mA
Changed
0.5mA
Item
Previous
Changed
Min
2.0
-0.5
Max
V
CC
+0.5
0.8
Min
2.0
-0.3
Max
V
CC
+0.3
0.8
V
IH
V
IL
Draft Data
Aug. 5. 1998
Sep. 7. 1998
Sep. 17. 1998
Nov. 5. 1998
Dec. 10. 1998
Mar. 2. 1999
Apr. 24. 2000
Aug. 25. 2000
Oct. 2. 2000
相關PDF資料 |
PDF描述 |
|---|---|
| K6R1016V1D-EC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016V1D-EI08 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016V1D-EI10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016V1D-UC08 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R3024V1D | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K6R1016V1D-EC08/10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-EC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-EI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-EI08/10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-EI10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
發布緊急采購，3分鐘左右您將得到回復。