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參數資料
| 型號： | K6R3024V1D-HI12 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| 中文描述： | 128K的× 24位高速CMOS靜態RAM（3.3V的工作） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 172K |
| 代理商： | K6R3024V1D-HI12 |
K6R3024V1D
CMOS SRAM
Revision 1.0
December 2001
- 1 -
for AT&T
Document Title
128Kx24 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Rev. 1.0
Remark
Design-In
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
Design-In Specification
Pin Configurations Modified ( page 2 )
Add Timing Diagram page 6 ~ 8 )
Modified Read Cycle Timing(2)
1) Version change from M to D
2) C
in
from 20 to 15 pF
3) Icc from 300 to 170mA for 9ns products
from 270 to 150mA for 10ns products
from 240 to 130mA for 12ns products
4) Isb ( TTL ) from 120 to 40 mA for all products
( CMOS ) from 30 to 15 mA for all products
5) Part number change from -9 to -09 for 9ns products
Change write parameter( tDW) from 6ns to 5ns at -10
Final Specification Release
Draft Data
Dec. 05. 2000
Mar. 07. 2001
April. 04.2001
June. 23.2001
Oct. 31. 2001
Dec. 19. 2001
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