- 您現在的位置：買賣IC網 > PDF目錄374288 > K6R4008V1D-JC (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges PDF資料下載
參數資料
| 型號： | K6R4008V1D-JC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges |
| 中文描述： | 1Mx4位高速靜態RAM（3.3V的）。在商用和工業溫度范圍運營 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 239K |
| 代理商： | K6R4008V1D-JC |
K6R4008V1D
CMOS SRAM
PRELIMINARY
Rev. 2.0
July 2004
- 1 -
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 1.0
Rev. 2.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
History
Initial release with Preliminary.
Add Low Ver.
Change Icc, Isb and Isb1
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
Item
1. Add the Lead Free Package type.
Item
Previous
110mA
90mA
80mA
70mA
130mA
115mA
100mA
85mA
30mA
0.5mA
Current
80mA
65mA
55mA
45mA
100mA
85mA
75mA
65mA
20mA
1.2mA
I
CC(Commercial)
8ns
10ns
12ns
15ns
8ns
10ns
12ns
15ns
I
CC(Industrial)
I
SB
I
SB1(L-ver.)
Previous
100mA
85mA
Current
90mA
75mA
I
CC(Industrial)
8ns
10ns
Draft Data
Aug. 20. 2001
Sep. 19. 2001
Nov. 3. 2001
Nov.23. 2001
Dec.18. 2001
July. 26, 2004
相關PDF資料 |
PDF描述 |
|---|---|
| K6T4008C1B-VF70 | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-VF70 | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1B-DB55 | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1B-DB70 | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1B-GB55 | 512Kx8 bit Low Power CMOS Static RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K6R4008V1D-JC08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4008V1D-JC08000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 8ns 36-Pin SOJ Tube |
| K6R4008V1D-JC10 | 制造商:Samsung Electro-Mechanics 功能描述:512K X 8 STANDARD SRAM, 10 ns, PDSO36 |
| K6R4008V1D-JC10T00 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin SOJ T/R |
| K6R4008V1D-JI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
發布緊急采購，3分鐘左右您將得到回復。