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參數資料
| 型號： | K6T0808C1D-RB70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 32Kx8位低功耗CMOS靜態RAM |
| 文件頁數： | 1/9頁 |
| 文件大小： | 170K |
| 代理商： | K6T0808C1D-RB70 |
K6T0808C1D Family
CMOS SRAM
Revision 1.0
November 1997
Document Title
32Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No
0.0
0.1
1.0
Remark
Design target
Preliminily
Final
History
Initial draft
First revision
- KM62256DL/DLI ISB1 = 100
→ 50A
KM62256DL-L ISB1 = 20
→ 10A
KM62256DLI-L ISB1 = 50
→ 15A
- CIN = 6
→ 8pF, CIO = 8 → 10pF
- KM62256D-4/5/7 Family
tOH = 5
→ 10ns
- KM62256DL/DLI IDR = 50
→30A
KM62256DL-L/DLI-L IDR = 30
→ 15A
Finalize
- Remove ICC write value
- Improved operating current
ICC2 = 70
→ 60mA
- Improved standby current
KM62256DL/DLI ISB1 = 50
→ 30A
KM62256DL-L ISB1 = 10
→ 5A
KM62256DLI-L ISB1 = 15
→ 5A
- Improved data retention current
KM62256DL/DLI IDR = 30
→ 5A
KM62256DL-L/DLI-L IDR = 15
→ 3A
- Remove 45ns part from commercial product and 100ns part
from industrial product.
Replace test load 100pF to 50pF for 55ns part
Draft Data
May 18, 1997
April 1, 1997
November 11, 1997
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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