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參數資料
| 型號： | K6T1008C2C-RB55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 128K x8 bit Low Power CMOS Static RAM |
| 中文描述： | 128K的x8位低功耗CMOS靜態RAM |
| 文件頁數： | 1/10頁 |
| 文件大小： | 189K |
| 代理商： | K6T1008C2C-RB55 |
PRELIMINARY
K6T1008C2C Family
CMOS SRAM
Revision 2.0
November 1997
1
Document Title
128K x8 bit Low Power CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
2.0
Remark
Design target
Preliminary
Final
History
Initial draft
First revision
- Seperate read and write at ICC, ICC1
ICC = ICC1
→ Read : 15mA, Write : 35mA
Finalized
- Add 70ns speed bin for commercial product and 85ns speed
bin for industrial.
Revised
- Improved operating current
Add typical value.
ICC Read : 15mA
→ 10mA(Remove write current)
ICC2 : 90mA
→ 60mA
- Speed bin change
Remove 45ns from commercial part
Remove 55ns and 100ns from industrial part.
Draft Date
November 22, 1995
April 15, 1996
September 5, 1996
November 5, 1997
The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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