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參數(shù)資料
| 型號(hào)： | K6T1008C2E-DL70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 128Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 128Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 190K |
| 代理商： | K6T1008C2E-DL70 |
CMOS SRAM
K6T1008C2E Family
Revision 3.0
March 2000
1
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No.
0.0
1.0
1.01
2.0
3.0
Remark
Preliminary
Final
Final
Final
History
Design target
Finalize
- Improve t
WP
form 55ns to 50ns for 70ns product.
- Remove 55ns speed bin from industrial product.
Errata correction
Revise
Revise
- Add 55ns parts to industrial products.
Draft Data
October 12, 1998
August 30, 1999
December 1, 1999
February 14, 2000
March 3, 2000
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
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| K6T1008C2E-F | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-GB55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-GB70 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-GF55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-GF70 | 128Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T1008C2E-F | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-GB55 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-GB70 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 128Kx8, 32 Pin, Plastic, SOP |
| K6T1008C2E-GB70000 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 70ns 32-Pin SOP |
| K6T1008C2E-GB70T00 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 70ns 32-Pin SOP T/R |
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