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參數資料
| 型號： | K6T4008C1B-P |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗CMOS靜態RAM |
| 文件頁數： | 1/9頁 |
| 文件大小： | 171K |
| 代理商： | K6T4008C1B-P |
K6T4008C1B Family
CMOS SRAM
Revision 3.0
September 1998
1
Document Title
512Kx8 bit Low Power CMOS Static RAM
Revision History
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision No.
0.0
0.1
1.0
2.0
3.0
Remark
Advance
Preliminary
Final
Final
Final
History
Initial Draft
Revise
- Changed Operating current by reticle revision
I
CC
at write : 35mA
→
45mA
I
CC1
at read/write : 15/35mA
→
10/45mA
Finalize
- Changed Operating current
I
CC1
at write : 45mA
→
40mA
I
CC
2; 90mA
→
80mA
- Change test load at 55ns : 100pF
→
50pF
Revise
- Change datasheet format
Revise
- Industrial product speed bin change:70/100ns
→
55/70ns
Draft Date
December 7, 1996
March 6, 1997
October 9, 1997
February 17, 1998
September 8, 1998
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