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參數資料
型號: K6T4008V1C-MF85
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
中文描述: 512Kx8位低功耗和低電壓的CMOS靜態RAM
文件頁數: 1/10頁
文件大?。?/td> 186K
代理商: K6T4008V1C-MF85
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
1
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.11
1.0
Remark
Advance
Preliminary
Final
History
Initial Draft
Revisied
- Speed bin change
KM68U4000C : 85/100ns
70/85/100ns
- DC Characteristics change
I
CC
: 5mA at read/write
4mA at read
I
CC1
: 3mA
4mA
I
CC2
: 35mA
30mA
I
SB
: 0.5mA
0.3mA
I
SB1
: 10
μ
A
15
μ
A for commercial parts
- Add 32-TSOP1-0820
Errata correct
- 32-TSOP1-0813 products: T
TG
Finalize
Draft Data
January 13, 1998
June 12, 1998
November 7, 1998
January 15, 1999
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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