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參數(shù)資料
| 型號(hào)： | K6X1008C2D-GB55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 128Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 128Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 176K |
| 代理商： | K6X1008C2D-GB55 |
CMOS SRAM
K6X1008C2D Family
Revision 1.0
September 2003
1
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.2
0.3
1.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Deleted 32-TSOP1-0820R Package Type.
- Added Commercial product.
Revised
- Added Lead Free 32-SOP-525 Product
Revised
- Added Lead Free 32-TSOP1-0820F Product
Finalized
- Changed I
CC
from 10mA to 5mA
- Changed I
CC
2 from 35mA to 25mA
- Changed I
SB
from 3mA to 0.4mA
- Changed I
DR
(industrial)
from 15
μ
A to 10
μ
A
- Changed I
DR
(Automotive)
from 25
μ
A to 20
μ
A
Draft Data
July 15, 2002
December 4, 2002
May 13, 2003
June 21, 2003
September 16, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
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| K6X1008C2D-GF55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GF70 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GQ55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GQ70 | 128Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X1008C2D-GB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2DGF55 | 制造商:Samsung Semiconductor 功能描述: |
| K6X1008C2D-GF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GF70000 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 70ns 32-Pin SOP Tray |
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