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參數資料
| 型號： | K6X4008T1F-GB55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | PT05SE18-32S |
| 中文描述： | 512Kx8位低功耗和低電壓的CMOS靜態RAM |
| 文件頁數： | 1/9頁 |
| 文件大小： | 174K |
| 代理商： | K6X4008T1F-GB55 |
K6X4008T1F Family
CMOS SRAM
Revision 1.0
September 2003
1
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.2
0.21
1.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
Initial Draft
Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
Revised
- Added Commercial product
Revised
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
Finalized
- Changed I
CC
from 4mA to 2mA
- Changed I
CC
1 from 4mA to 3mA
- Changed I
CC
2 from 30mA to 25mA
- Changed I
SB
1
(Commercial)
from 15
μ
A to 10
μ
A
- Changed I
SB
1
(industrial)
from 20
μ
A to 10
μ
A
- Changed I
SB
1
(Automotive)
from 30
μ
A to 20
μ
A
- Changed I
DR
(Commercial)
from 15
μ
A to 10
μ
A
- Changed I
DR
(industrial)
from 20
μ
A to 10
μ
A
- Changed I
DR
(Automotive)
from 30
μ
A to 20
μ
A
Draft Data
July 29, 2002
October 14, 2002
December 2, 2002
March 26, 2003
September 16, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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